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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11569226 B1

PDFFull Text
Date of Patent:
Jan. 31, 2023

Filed:

Dec. 21, 2020

Semiconductor device including vertical routing structure and method for manufacturing the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wei-Chih Wen, Hsinchu, TW;

Han-Ting Tsai, Kaoshiung, TW;

Chung-Te Lin, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Tu-Tu V Ho

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/822 (2006.01); H01L 21/768 (2006.01); H01L 27/22 (2006.01); H01L 23/525 (2006.01); H01L 23/522 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 43/12 (2006.01); H01L 27/32 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); H01L 21/76816 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 21/8221 (2013.01); H01L 23/525 (2013.01); H01L 23/5226 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 43/12 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/16 (2013.01); H01L 21/823475 (2013.01); H01L 27/3225 (2013.01);
Abstract

A method includes forming a transistor having source and drain regions. The following are formed on the source/drain region: a first via, a first metal layer extending along a first direction on the first via, a second via overlapping the first via on the first metal layer, and a second metal extending along a second direction different from the first direction on the second via; and the following are formed on the drain/source region: a third via, a third metal layer on the third via, a fourth via overlapping the third via over the third metal layer, and a controlled device at a same height level as the second metal layer on the third metal layer.

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