The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Apr. 14, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nikhil Jain, Albany, NY (US);

Hsueh-Chung Chen, Cohoes, NY (US);

Mary Claire Silvestre, Clifton Park, NY (US);

Hosadurga Shobha, Niskayuna, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01N 21/956 (2006.01); G01B 11/30 (2006.01); G01N 21/95 (2006.01); G01B 11/16 (2006.01); H01L 21/67 (2006.01); G03F 7/20 (2006.01); G01B 11/255 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01B 11/16 (2013.01); G01B 11/306 (2013.01); G01N 21/9501 (2013.01); G01N 21/95607 (2013.01); G01B 11/255 (2013.01); G03F 7/70783 (2013.01); H01L 21/67288 (2013.01);
Abstract

A semiconductor structure and a method for managing semiconductor wafer stress are disclosed. The semiconductor structure includes a semiconductor wafer, a first stress layer disposed on and in contact with a backside of the semiconductor wafer, and a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second layer exerts a second stress on the semiconductor wafer that is opposite the first backside stress. The method includes forming a first stress layer on and in contact with a backside of a semiconductor wafer, and further forming a second stress layer on and in contact with the first stress layer. The first stress layer exerts a first stress on the semiconductor wafer and the second stress layer exerts a second stress on the semiconductor wafer that is opposite to the first stress.


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