The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Feb. 14, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Murali Narasimhan, San Jose, CA (US);

Patrick Pannese, San Jose, CA (US);

Kunal Jain, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); G05D 11/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67196 (2013.01); G05D 11/10 (2013.01); H01L 21/67248 (2013.01);
Abstract

A method includes flowing gas comprising an oxidation inhibiting gas into a chamber of a semiconductor processing system. The chamber includes one or more of a factory interface of the semiconductor processing system or an adjacent chamber that is mounted to the factory interface. The method further includes receiving, via one or more sensors coupled to the chamber, sensor data indicating at least one of a current oxygen level within the chamber or a current moisture level within the chamber. The method further includes determining, based on the sensor data, whether to perform an adjustment of a current amount of the oxidation inhibiting gas entering into the chamber. The method further includes, responsive to determining to perform the adjustment, causing the adjustment of the current amount of the oxidation inhibiting gas entering into the chamber.


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