Multi-gate transistors, apparatus having multi-gate transistors, and methods of forming multi-gate transistors

Abstract

Multi-gate transistors, as well as apparatus containing such multi-gate transistors and methods of forming such multi-gate transistors, might facilitate gating voltages in integrated circuit devices. Such multi-gate transistors might include an active area having a first conductivity type, a first source/drain region in the active area and having a second conductivity type different than the first conductivity type, a second source/drain region in the active area and having the second conductivity type, and a plurality of control gates adjacent the active area between the first source/drain region and the second source/drain region, wherein each control gate of the plurality of control gates comprises a respective plurality of control gate portions, and wherein, for a particular control gate of the plurality of control gates, each control gate portion of its respective plurality of control gate portions is adjacent the active area in a respective plane of a plurality of different planes.