The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Dec. 10, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/14 (2006.01); G06F 21/72 (2013.01); G06F 21/79 (2013.01); G06F 21/85 (2013.01); H04L 9/06 (2006.01); G06F 21/74 (2013.01);
U.S. Cl.
CPC ...
G06F 12/1408 (2013.01); G06F 21/72 (2013.01); G06F 21/74 (2013.01); G06F 21/79 (2013.01); G06F 21/85 (2013.01); H04L 9/06 (2013.01); G06F 2212/1052 (2013.01); H04L 2209/08 (2013.01);
Abstract
A method of encrypting data in a nonvolatile memory device (NVM) includes; programming data in selected memory cells, sensing the selected memory cells at a first time during a develop period to provide random data, sensing the selected memory cells at a second time during the develop period to provide main data, encrypting the main data using the random data to generate encrypted main data, and outputting the encrypted main data to an external circuit, wherein the randomness of the random data is based on a threshold voltage distribution of the selected memory cells.