The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Dec. 20, 2019
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Byung-Jin Choi, Austin, TX (US);

Anshuman Cherala, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0002 (2013.01); H01L 21/0271 (2013.01);
Abstract

A nanofabrication method comprises receiving information regarding a distortion within an imprint system, generating a first drop pattern of formable material based on the received information, dispensing a first plurality of drops onto a substrate according to the first drop pattern, contacting the dispensed first plurality of drops with a patternless superstrate to form a first layer of formable material, forming a first cured layer by curing the first layer of formable material while the superstrate is contacting the first layer of formable material, separating the superstrate from the first cured layer, depositing an etch resistant layer on the first cured layer, generating a second drop pattern of formable material, dispensing a second plurality of drops onto the etch resistant layer according to the second drop pattern, and contacting the dispensed second plurality of drops with a patterned template to form a second layer of formable material.


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