The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Mar. 15, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Jau-Yi Wu, Zhubei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 29/786 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 23/00 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); G11C 13/0004 (2013.01); H01L 21/823487 (2013.01); H01L 27/2427 (2013.01); H01L 27/2436 (2013.01); H01L 29/78642 (2013.01); H01L 45/06 (2013.01); H01L 45/1226 (2013.01); H01L 45/1253 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01); H01L 45/1608 (2013.01); G11C 2213/52 (2013.01); G11C 2213/71 (2013.01); G11C 2213/73 (2013.01); G11C 2213/79 (2013.01); H01L 24/06 (2013.01); H01L 27/0688 (2013.01); H01L 27/2454 (2013.01); H01L 29/7851 (2013.01); H01L 45/04 (2013.01); H01L 45/1206 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1675 (2013.01);
Abstract
A semiconductor memory device disposed over a substrate includes a common electrode, a selector material layer surrounding the common electrode, and a plurality of phase change material layers in contact with the selector material layer.