The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Dec. 28, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Jenn-Gwo Hwu, Taipei, TW;
Samuel C. Pan, Hsinchu, TW;
Chien-Shun Liao, Hsinchu, TW;
Kuan-Hao Tseng, Kaohsiung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Abstract
A semiconductor memory device includes a transistor having a gate, a source and a drain and a metal-insulator-semiconductor (MIS) structure. The transistor and the MIS structure are disposed on a common substrate. The MIS structure includes a dielectric layer disposed on a semiconductor region, and an electrode electrically disposed on the dielectric layer and coupled to the drain of the transistor. The electrode includes a bulk portion and a high-resistance portion, both disposed on the dielectric layer. The high-resistance portion has a resistance value in a range from 1.0×10Ωcm to 1.0×10Ωcm or a sheet resistance in a range from 1.0×10Ω/□ to 1.0×10Ω/□.