The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

Sep. 29, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Shirish Pethe, Cupertino, CA (US);

Fuhong Zhang, San Jose, CA (US);

Joung Joo Lee, San Jose, CA (US);

Rui Li, San Jose, CA (US);

Xiangjin Xie, Fremont, CA (US);

Xianmin Tang, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/3215 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76871 (2013.01); H01L 21/3215 (2013.01); H01L 21/32133 (2013.01); H01L 21/76846 (2013.01); H01L 21/76855 (2013.01); H01L 21/76882 (2013.01);
Abstract

Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.


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