The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Apr. 28, 2020
International Business Machines Corporation, Armonk, NY (US);
Tao Li, Albany, NY (US);
Ekmini Anuja De Silva, Slingerlands, NY (US);
Tsung-Sheng Kang, Ballston Lake, NY (US);
Praveen Joseph, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A novel dielectric cap structure for VTFET device fabrication is provided. In one aspect, a method of forming a VTFET device includes: patterning fins in a substrate using fin hardmasks, including a first fin(s) and a second fin(s); depositing a liner over the fins and the fin hardmasks; selectively forming first hardmask caps on top of the fin hardmasks/liner over the first fin(s); forming first bottom source and drain at a base of the first fin(s) while the fin hardmasks/liner over the first fin(s) are preserved by the first hardmask caps; selectively forming second hardmask caps on top of the fin hardmasks/liner over the second fin(s); and forming second bottom source and drains at a base of the second fin(s) while the fin hardmasks/liner over the second fin(s) are preserved by the second hardmask caps. A device structure is also provided.