The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2023
Filed:
Jul. 07, 2021
Renesas Electronics Corporation, Tokyo, JP;
Hideki Makiyama, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A wafer having a semiconductor substrate including a peripheral region and a central region, an insulating layer and a semiconductor layer is prepared first. Next, a plurality of trenches penetrating through the semiconductor layer and the insulating layer and reaching an inside of the semiconductor substrate are formed. Next, an inside of each of the plurality of trenches is filled with an insulating film, so that a plurality of element isolating portions is formed. Next, in the central region, the semiconductor layer exposed from a resist pattern is removed. The end portion closest to the outer edge of the semiconductor substrate among ends of the resist pattern used for removing the semiconductor layer in the central region is formed so as to be positioned closer to the outer edge of the semiconductor substrate than a position of the end portion closest to the outer edge of the semiconductor substrate among ends of the resist pattern used for forming the trenches.