The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Nov. 04, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Garming Liang, Hsin-Chu, TW;
Simon Chai, Hsin-Chu, TW;
Tzu-Jin Yeh, Hsinchu, TW;
En-Hsiang Yeh, Hsin-Chu, TW;
Wen-Sheng Chen, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/22 (2006.01); H03F 3/21 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H03F 1/02 (2006.01);
U.S. Cl.
CPC ...
H03F 3/211 (2013.01); H01L 27/0629 (2013.01); H01L 27/0928 (2013.01); H03F 1/0205 (2013.01); H03F 1/223 (2013.01); H03F 2200/451 (2013.01); H03F 2200/72 (2013.01); H03F 2200/75 (2013.01);
Abstract
Disclosed is an amplifying circuit and method. In one embodiment, an amplifying circuit, includes: a common-gate (CG) amplifier, wherein the CG amplifier comprises a first transistor, wherein source terminal and body terminal of the first transistor is coupled together through a first resistor.
Liang, Garming. (2023). Method and circuit to isolate body capacitance in semiconductor devices (U.S. Patent No. 11558019). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11558019
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile