The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Sep. 22, 2020
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Wolfgang Lehnert, Lintach, DE;
Rudolf Berger, Regensburg, DE;
Rudolf Lehner, Laaber, DE;
Gerhard Metzger-Brueckl, Geisenfeld, DE;
Guenther Ruhl, Regensburg, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/78 (2006.01); H01L 21/683 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68377 (2013.01); H01L 2221/68381 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.