The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Oct. 22, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Bin Zhang, Shanghai, CN;
Abstract
Semiconductor devices and fabrication methods thereof are provided. The method may include forming a first sacrificial film on a to-be-etched layer having; and forming second sacrificial layers on the first sacrificial film. A first trench or a second trench is between adjacent second sacrificial layers; and a width of the second trench is greater than a width of the first trench. The method also includes forming a first sidewall spacer on a sidewall surface of a second sacrificial layer, a ratio between the width of the first trench and a thickness of the first sidewall spacer being greater than 2:1; and etching the first sacrificial film using the first sidewall spacer as an etching mask to form first sacrificial layers. A third trench or a second trench is between adjacent first sacrificial layers. The method also includes forming a second sidewall spacer to fill the third trench.