The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Sep. 25, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Satoshi Takagi, Nirasaki, JP;

Kazuya Kitamura, Nirasaki, JP;

Hsiulin Tsai, Hsin-chu, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/56 (2006.01); C23C 16/46 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02639 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/46 (2013.01); C23C 16/56 (2013.01); H01L 21/02488 (2013.01); H01L 21/02499 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01);
Abstract

There is provided a film forming method including: adsorbing fluorine onto a substrate on which a region in which a nitride film is exposed and a region in which an oxide film is exposed are provided adjacent to each other by supplying a fluorine-containing gas to the substrate, and forming a stepped surface on a side surface of the oxide film by selectively etching the nitride film, among the nitride film and the oxide film, so as to cause a surface of the nitride film to be more deeply recessed than a surface of the oxide film; and after the adsorbing the fluorine onto the substrate and forming the stepped surface, selectively forming a semiconductor film on the nitride film, among the nitride film and the oxide film, by supplying a raw material gas including a semiconductor material to the substrate.


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