The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Jun. 18, 2015
Toshiba Mitsubishi-electric Industrial Systems Corporation, Chuo-ku, JP;
Kyoto University, Kyoto, JP;
Kochi Prefectural Public University Corporation, Kochi, JP;
Takahiro Hiramatsu, Tokyo, JP;
Hiroyuki Orita, Tokyo, JP;
Toshiyuki Kawaharamura, Kochi, JP;
Shizuo Fujita, Kyoto, JP;
Takayuki Uchida, Kyoto, JP;
Toshiba Mitsubishi-Electric Industrial Systems Corporation, Chuo-ku, JP;
Kyoto University, Kyoto, JP;
Abstract
In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.