The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Aug. 17, 2021
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
Embodiments of a marking pattern in forming the staircase structure of a three-dimensional (3D) memory device are provided. In an example, a semiconductor device includes a stack structure having insulating layers and conductor layers arranged alternatingly over a substrate along a vertical direction; and a marking pattern having interleaved layers over the substrate and neighboring the stack structure. The marking pattern includes a central marking structure located in a marking area. The central marking structure consists of interleaved layers and divides the marking area into a first marking sub-area and a second marking sub-area. A first pattern density of the first marking sub-area is higher than or equal to a second pattern density of the second marking sub-area.