The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Dec. 07, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Koji Kagawa, Koshi, JP;

Takayuki Toshima, Koshi, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/02118 (2013.01); H01L 21/32138 (2013.01); H01L 21/32139 (2013.01); H01L 21/6715 (2013.01);
Abstract

A substrate processing method includes (A) supplying to the substrate a first processing liquid containing a removing agent for deposit, a solvent having a boiling point lower than that of the removing agent and a thickener, (B), after (A), supplying to the substrate a second processing liquid containing an organic polymer to be a gas diffusion barrier film, (C), after (B), heating the substrate at a predetermined temperature equal to or higher than the boiling point of the solvent and lower than the boiling point of the removing agent to promote evaporation of the solvent and reaction between the deposit and the removing agent, and (D), after (C), supplying a rinsing liquid to the substrate to remove the deposit from the substrate. The gas diffusion barrier film prevents a gaseous reactive product generated by the reaction in (C) from diffusing around the substrate.


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