The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Oct. 02, 2017
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Barton G. Lane, Austin, TX (US);
Peter L. G. Ventzek, Austin, TX (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3222 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32385 (2013.01); H01J 37/32091 (2013.01); H01J 37/32715 (2013.01); H01L 21/67069 (2013.01); H01L 21/6831 (2013.01);
Abstract
Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.