The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Apr. 08, 2021
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventors:

Chia-Jung Hsu, Hsinchu County, TW;

Wei-Ren Chen, Hsinchu County, TW;

Wein-Town Sun, Hsinchu County, TW;

Assignee:

eMemory Technology Inc., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01); G11C 16/08 (2006.01); G11C 16/14 (2006.01); G11C 16/24 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); H01L 27/11521 (2017.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); G11C 13/0038 (2013.01); G11C 13/0069 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); H01L 27/11519 (2013.01); H01L 27/11521 (2013.01); H01L 27/11524 (2013.01); H01L 29/42328 (2013.01);
Abstract

A memory device includes a well, a poly layer, a dielectric layer, an alignment layer and an active area. The poly layer is formed above the well. The dielectric layer is formed above the poly layer. The alignment layer is formed on the dielectric layer, used to receive an alignment layer voltage and substantially aligned with the dielectric layer in a projection direction. The active area is formed on the well. The dielectric layer is thicker than the alignment layer. A first overlap area of the poly layer and the active area is smaller than a second overlap area of the poly layer and the dielectric layer excluding the first overlap area.


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