The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Apr. 29, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Wei Lu Chu, Pudong, CN;
Dong Pan, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/30 (2006.01); G05F 3/26 (2006.01); H03F 3/45 (2006.01); H03F 3/213 (2006.01);
U.S. Cl.
CPC ...
H03F 1/301 (2013.01); G05F 3/262 (2013.01); H03F 3/213 (2013.01); H03F 3/45112 (2013.01); H03F 3/45273 (2013.01);
Abstract
Devices and methods include voltage buses. The devices also include one or more power amplifiers coupled to the voltage bus. Each of the one or more power amplifiers include one or more transistors. The devices also include a model that is configured to emulate leakage from at least one of the one or more transistors. A current mirror with a first transistor coupled to the model and a second transistor coupled to the voltage bus. The current mirror is configure to draw charge from the voltage bus based at least in part on the emulated leakage from the model.