The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Apr. 14, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yong-Sheng Huang, Taipei, TW;
Ming-Chyi Liu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7926 (2013.01); H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/40114 (2019.08); H01L 29/42344 (2013.01); H01L 29/66666 (2013.01); H01L 29/66833 (2013.01);
Abstract
A memory device includes an active region, a select gate, a control gate, and a blocking layer. The active region includes a bottom portion and a protruding portion protruding from the bottom portion. A source is in the bottom portion and a drain is in the protruding portion. The select gate is above the bottom portion. A top surface of the select gate is lower than a top surface of the protruding portion. The control gate is above the bottom portion. The blocking layer is between the select gate and the control gate.