The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Mar. 30, 2021
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Tianzhi Zhu, Shanghai, CN;
Guanqun Huang, Shanghai, CN;
Haoyu Chen, Shanghai, CN;
Hua Shao, Shanghai, CN;
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Abstract
The application provides a SCR and a manufacturing method thereof. The SCR comprises: a P-type heavily doped regionand an N-type lightly doped regionforming an anode formed on the upper part of an N-type well, a P-type heavily doped regionand an N-type heavily doped regionforming a cathode formed on the upper part of a P-type well, an active region of the N-type wellis between the N-type lightly doped regionand an interface of the N-type welland the P-type well, a STI is provided between the N-type heavily doped regionand the interface, the STI is adjacent to the N-type heavily doped region, and an active region of the P-type wellis provided between the STI and the interface. The present application can improve trigger voltage of the SCR and save layout area.