The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Aug. 04, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/762 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 27/08 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/76224 (2013.01); H01L 23/5226 (2013.01); H01L 23/5228 (2013.01); H01L 27/0688 (2013.01); H01L 27/0814 (2013.01); H01L 28/20 (2013.01); H01L 21/31053 (2013.01);
Abstract
A semiconductor device includes a substrate, a first isolation structure, a second isolation structure and a dummy pattern. The substrate includes a first part surrounding a second part at a top view. The first isolation structure is disposed between the first part and the second part, to isolate the first part from the second part. The second isolation structure is disposed at at least one corner of the first part. The dummy pattern is disposed on the second isolation structure. The present invention also provides a method of forming said semiconductor device.