The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Dec. 17, 2018
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Mark MacDonald, Beaverton, OR (US);

David Pidwerbecki, Hillsboro, OR (US);

Mark Gallina, Hillsboro, OR (US);

Jerrod Peterson, Hillsboro, OR (US);

Assignee:

INTEL CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/42 (2006.01); H01L 23/40 (2006.01); H01L 23/24 (2006.01); H01L 23/473 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3675 (2013.01); H01L 23/3736 (2013.01); H01L 23/42 (2013.01); H01L 23/24 (2013.01); H01L 23/3672 (2013.01); H01L 23/40 (2013.01); H01L 23/473 (2013.01); H01L 2224/73253 (2013.01);
Abstract

Enhanced thermal energy transfer systems for semiconductor packages are provided. A thermally conductive member is disposed in the interstitial space between an upper surface of a semiconductor package and a lower surface of a thermal member. The thermally conductive member is disposed above a first portion of the upper surface of the semiconductor package having a relatively higher thermal energy output when the semiconductor package is operating. A thermal interface material is disposed in the interstitial space and a force applied to the thermal member. The thermally conductive member forms a relatively higher pressure region above the first portion of the semiconductor package and a relatively lower pressure region in other portions of the semiconductor package remote from the thermally conductive member. The increased pressure region proximate the thermally conductive member beneficially enhances the flow of thermal energy from the first portion of the semiconductor package to the thermal member.


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