The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Apr. 21, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Daniele Vimercati, El Dorado Hills, CA (US);

Xinwei Guo, Folsom, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 11/4094 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2273 (2013.01); G11C 11/221 (2013.01); G11C 11/2255 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01);
Abstract

Methods, systems, and devices for differential amplifier schemes for non-switching state compensation are described. During a read operation, a first node of a memory cell may be coupled with an input of differential amplifier while a second node of the memory cell may be biased with a first voltage (e.g., to apply a first read voltage across the memory cell). The second node of the memory cell may subsequently be biased with a second voltage (e.g., to apply a second read voltage across the memory cell), which may support the differential amplifier operating in a manner that compensates for a non-switching state of the memory cell. By compensating for a non-switching state of a memory cell during read operations, read margins may be increased.


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