The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Mar. 09, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yun Li, Fremont, CA (US);

Kishore Kumar Muchherla, Fremont, CA (US);

Peter Feeley, Boise, ID (US);

Ashutosh Malshe, Fremont, CA (US);

Daniel J. Hubbard, Boise, ID (US);

Christopher S. Hale, Boise, ID (US);

Kevin R. Brandt, Boise, ID (US);

Sampath K. Ratnam, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 12/02 (2006.01); G06F 12/0891 (2016.01);
U.S. Cl.
CPC ...
G06F 12/0253 (2013.01); G06F 12/0891 (2013.01); G06F 2212/1044 (2013.01);
Abstract

Memory circuits including dynamically configurable cache cells are disclosed herein. The cache cells may be selectively and dynamically configured to select one or more bits per cell according to a real-time determination or characterization of a workload type.


Find Patent Forward Citations

Li, Yun. (2023). Memory device with dynamic storage mode control (U.S. Patent No. 11544188). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11544188

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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