The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Apr. 16, 2020
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Abraham Arceo de la Pena, Albany, NY (US);
Jennifer Church, Troy, NY (US);
Nelson Felix, Slingerlands, NY (US);
Ekmini Anuja De Silva, Slingerlands, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/09 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01); H01L 21/04 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
G03F 7/094 (2013.01); G03F 7/2037 (2013.01); H01L 21/022 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/046 (2013.01);
Abstract
An exemplary semiconductor fabrication stack includes underlying layers; an organic planarization layer atop the underlying layers; a metal oxide hardmask atop the organic planarization layer and doped with both carbon and nitrogen; and an organic photoresist directly atop the doped metal oxide hardmask. In one or more embodiments, the doped metal oxide hardmask exhibits a water contact angle of greater than 80°.