The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

May. 21, 2021
Applicant:

Industrial Technology Research Institute, Hsinchu, TW;

Inventors:

Ta-Ching Hsiao, Zhudong Township, Hsinchu County, TW;

Chu-Pi Jeng, Hsinchu, TW;

Kuo-Lun Huang, Hsinchu, TW;

Mu-Hsi Sung, Hsinchu, TW;

Keng-Yang Chen, Zhudong Township, Hsinchu County, TW;

Li-Duan Tsai, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 53/46 (2006.01); C01B 32/984 (2017.01); C01B 35/02 (2006.01); C01B 32/97 (2017.01); C01B 32/20 (2017.01); B01J 3/00 (2006.01); B01J 8/02 (2006.01); B01J 8/00 (2006.01);
U.S. Cl.
CPC ...
B01D 53/46 (2013.01); B01J 3/006 (2013.01); B01J 8/0095 (2013.01); B01J 8/0278 (2013.01); C01B 32/20 (2017.08); C01B 32/97 (2017.08); C01B 32/984 (2017.08); C01B 35/023 (2013.01); B01D 2257/10 (2013.01);
Abstract

A method for removing boron is provided, which includes (a) mixing a carbon source material and a silicon source material in a chamber to form a solid state mixture, (b) heating the solid state mixture to a temperature of 1000° C. to 1600° C., and adjusting the pressure of the chamber to 1 torr to 100 torr. The method also includes (c) conducting a gas mixture of a first carrier gas and water vapor into the chamber to remove boron from the solid state mixture, and (d) conducting a second carrier gas into the chamber.


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