The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Dec. 23, 2019
Applicants:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Assignees:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7849 (2013.01); H01L 21/02381 (2013.01); H01L 21/02546 (2013.01); H01L 21/02603 (2013.01); H01L 21/02639 (2013.01); H01L 21/26506 (2013.01); H01L 21/324 (2013.01); H01L 29/0676 (2013.01); H01L 29/1037 (2013.01); H01L 29/1054 (2013.01); H01L 29/267 (2013.01); H01L 29/36 (2013.01); H01L 29/66522 (2013.01); H01L 29/66568 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7842 (2013.01); H01L 29/7843 (2013.01);
Abstract
A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.