The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Feb. 08, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Takeshi Suwa, Kawasaki Kanagawa, JP;
Tomoko Matsudai, Shibuya Tokyo, JP;
Yoko Iwakaji, Meguro Tokyo, JP;
Hiroko Itokazu, Kawasaki Kanagawa, JP;
Takako Motai, Yokohama Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes first and third semiconductor layers of a first conductivity type, and second, fourth and fifth semiconductor layers of a second conductivity type. The first semiconductor layer is provided on the fifth semiconductor layer. The second semiconductor layer is provided on the first semiconductor layer. The third and fourth semiconductor layers are arranged along the second semiconductor layer. In a plane parallel to an upper surface of the second semiconductor layer, the fourth semiconductor layer has a surface area greater than a surface area of the third semiconductor layer. The device further includes first to third electrodes, and first control electrode. The first to third electrodes are electrically connected to the third to fifth semiconductor layers, respectively. The first control electrode is provided in a first trench extending into the first semiconductor layer from an upper surface of the third semiconductor layer.