The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Mar. 25, 2015
Nexperia B.v., Nijmegen, NL;
Johannes Josephus Theodorus Marinus Donkers, Eindhoven, NL;
Hans Broekman, Nijmegen, NL;
Nexperia B.V., Nijmegen, NL;
Abstract
A semiconductor device () and a method for manufacturing a semiconductor device (). The semiconductor device () includes a substrate (), a GaN layer (), and an AlGaN layer (). The GaN layer () is located between the substrate () and the AlGaN layer (). The device further includes at least one contact (), comprising a central portion () and an edge portion (), and a passivation layer () located at least between the edge portion () of the contact () and the AlGaN layer (). The edge portion () is spaced apart from an upper surface of the passivation layer (). The edge portion () may be spaced apart from the passivation layer () by a further layer () or by an air gap ().