The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Sep. 10, 2020
Infineon Technologies Ag, Neubiberg, DE;
Johannes Georg Laven, Taufkirchen, DE;
Roman Baburske, Otterfing, DE;
Alexander Philippou, Munich, DE;
Christian Philipp Sandow, Haar, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A power device includes: a diode section; a semiconductor body; a drift region extending into the diode section; trenches in the diode section and extending along a vertical direction into the semiconductor body, two adjacent trenches defining a respective mesa portion in the semiconductor body; a body region in the mesa portions; in the diode section, a barrier region between the body and drift regions and having a dopant concentration at least 100 times greater than an average dopant concentration of the drift region and a dopant dose greater than that of the body region. The barrier region has a lateral structure according to which at least 50% of the body region in the diode section is coupled to the drift region at least by the barrier region, and at least 5% of the body region in the diode section is coupled to the drift region without the barrier region.