The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Aug. 13, 2020
Omnivision Technologies, Inc., Santa Clara, CA (US);
Hui Zang, San Jose, CA (US);
Gang Chen, San Jose, CA (US);
Chao Niu, Santa Clara, CA (US);
Zhiqiang Lin, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
A pixel cell includes a photodiode disposed proximate to a front side of a semiconductor layer to generate image charge in response to incident light directed through a backside of the semiconductor layer. A cell deep trench isolation (CDTI) structure is disposed along an optical path of the incident light to the photodiode and proximate to the backside of the semiconductor layer. The CDTI structure includes a plurality of portions arranged in the semiconductor layer. Each of the plurality of portions extends a respective depth from the backside towards the front side of the semiconductor layer. The respective depth of each of the plurality of portions is different than a respective depth of a neighboring one of the plurality of portions. Each of the plurality of portions is laterally separated and spaced apart from said neighboring one of the plurality of portions in the semiconductor layer.