The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Apr. 01, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jongho Park, Cheonan-si, KR;

Seung Hwan Kim, Asan-si, KR;

Jun Young Oh, Seoul, KR;

Jungjoo Kim, Daegu, KR;

Yongkwan Lee, Hwaseong-si, KR;

Dong-Ju Jang, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 23/5383 (2013.01); H01L 25/50 (2013.01); H01L 24/16 (2013.01); H01L 24/73 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/73204 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01);
Abstract

A semiconductor package includes a first substrate that includes a first trench on a recessed portion of a bottom surface of the first substrate and a first through hole extending through the first substrate to the first trench, a first semiconductor chip on the first substrate, a first capacitor chip in the first trench and on the first substrate, and a first molding layer on the first substrate and covering the first semiconductor chip. The first molding layer includes a first part that extends parallel to a top surface of the first substrate, a second part connected to the first part and extending vertically in the first through hole, and a third part connected to the second part and surrounding the first capacitor chip. A bottom surface of the third part is coplanar with the bottom surface of the first substrate.


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