The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

May. 15, 2020
Applicant:

Nexperia B.v., Nijmegen, NL;

Inventors:

Ricardo Lagmay Yandoc, Nijmegen, NL;

Manoj Balakrishnan, Nijmegen, NL;

Assignee:

Nexperia B.V., Nijmegen, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/07 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/072 (2013.01); H01L 23/3121 (2013.01); H01L 23/49541 (2013.01); H01L 23/49575 (2013.01); H01L 24/37 (2013.01); H01L 24/48 (2013.01); H01L 25/50 (2013.01); H01L 2224/37013 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48175 (2013.01);
Abstract

This disclosure relates to a discrete cascode semiconductor device and associated method of manufacture, the device includes: a high voltage depletion mode device die having gate, source and drain terminals arranged on a first major surface thereof; a low voltage enhancement mode device die having a gate and a source terminal formed on a first major surface thereof, and a drain terminal formed on a second major surface opposite the first major surface. The drain terminal of the high voltage device die is mounted on a drain connection; the source terminal of the low voltage device die and the gate terminal of the high voltage device are mounted on a common source connection; and the drain terminal of the low voltage device die is mounted on the source terminal of the high voltage device.


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