The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Sep. 03, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Lulu Peng, Singapore, SG;

Nur Aziz Yosokumoro, Singapore, SG;

Zishan Ali Syed Mohammed, Singapore, SG;

Lawrence Selvaraj Susai, Singapore, SG;

Chor Shu Cheng, Singapore, SG;

Yong Chau Ng, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01L 23/5223 (2013.01); H01L 28/10 (2013.01); H01L 28/40 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device comprises an inductor in a far back end of line layer and a capacitor adjacent to and electrically coupled with the inductor. The capacitor comprises a first electrode layer arranged over sidewalls and a bottom surface of a via in a first insulating layer A dielectric layer is provided over the first electrode layer. A second electrode layer is provided over the dielectric layer and a metal fill layer is provided over the second electrode layer. The metal fill layer has a top surface at least level with a top surface of the first insulating layer.


Find Patent Forward Citations

Loading…