The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Sep. 01, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Chuanxi Yang, Los Altos, CA (US);

Hang Yu, San Jose, CA (US);

Yu Yang, Cupertino, CA (US);

Chuan Ying Wang, Sunnyvale, CA (US);

Allison Yau, Mountain View, CA (US);

Xinhai Han, Santa Clara, CA (US);

Sanjay G. Kamath, Fremont, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); C23C 16/345 (2013.01); H01L 21/02274 (2013.01);
Abstract

Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.


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