The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Jul. 12, 2021
Weebit Nano Ltd., Hod Hasharon, IL;
Lior Dagan, Tzafon, IL;
Weebit Nano Ltd., Hod Hasharon, IL;
Abstract
A resistive random-access memory (ReRAM) cell formed on a silicon over insulator substrate (SOI) is provided. The ReRAM includes a SOI substrate, a first MOSFET and a second MOSFET, each of which having a drain port, a gate port, a source port, and a bulk port. The drain port of the second MOSFET is connected to the source port of the first MOSFET; a first resistive element and a second resistive element, each having a first port and a second port, wherein the first ports of both resistive elements are connected to the drain of the first MOSFET; a first word line and a second word line connected to the gate port of the first MOSFET and the second MOSFET, respectively; and the state of the ReRAM cell is determined upon applying a predefined potential.