The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Jun. 15, 2021
Texas Instruments Incorporated, Dallas, TX (US);
Nandakumar Mahalingam, Richardson, TX (US);
Texas Instmments Incorporated, Dallas, TX (US);
Abstract
An IC includes a first and second active areas (AA) with a second conductivity type, a source and drain region, and an LDD extension to the source and drain in the first AA having a first conductivity type. A first bent-gate transistor includes a first gate electrode over the first AA extending over the corresponding LDD. The first gate electrode includes an angled portion that crosses the first AA at an angle of 45° to 80°. A second transistor includes a second gate electrode over the second AA extending over the corresponding LDD including a second gate electrode that can cross an edge of the second AA at an angle of about 90°. A first pocket distribution of the second conductivity type provides a pocket region under the first gate electrode. A threshold voltage of the first bent-gate transistor is ≥30 mV lower as compared to the second transistor.