The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Dec. 21, 2020
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventor:

Sony Varghese, Manchester, MA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01); H01L 27/108 (2006.01); H01L 21/033 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/0337 (2013.01); H01L 21/3065 (2013.01); H01L 27/10844 (2013.01);
Abstract

A method may include forming in a substrate a first array of a first material of first linear structures, interspersed with a second array of a second material, of second linear structures, the first and second linear structures elongated along a first axis. The method may include generating a chop pattern in the first layer, comprising a third linear array, interspersed with a fourth linear array. The third and fourth linear arrays may be elongated along a second axis, forming a non-zero angle of incidence with respect to the first axis. The third linear array may include alternating portions of the first and second material, while the fourth linear array comprises an array of cavities, arranged within the patterning layer. The method may include elongating a first set of cavities along the first axis, to form a first set of elongated cavities bounded by the first material.


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