The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Oct. 23, 2020
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Naoki Fujiwara, Osaka, JP;
Hideki Yagi, Osaka, JP;
Hajime Shoji, Osaka, JP;
Takuo Hiratani, Osaka, JP;
Takehiko Kikuchi, Osaka, JP;
Toshiyuki Nitta, Osaka, JP;
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/10 (2021.01); H01S 5/343 (2006.01); H01S 5/042 (2006.01); H01S 5/02 (2006.01);
U.S. Cl.
CPC ...
H01S 5/101 (2013.01); H01S 5/04256 (2019.08); H01S 5/1007 (2013.01); H01S 5/1014 (2013.01); H01S 5/1032 (2013.01); H01S 5/3434 (2013.01); H01S 5/021 (2013.01); H01S 5/0218 (2013.01);
Abstract
A semiconductor optical device includes an SOI substrate having a waveguide of silicon, and at least one gain region of a group III-V compound semiconductor having an optical gain bonded to the SOI substrate. The waveguide has a bent portion and multiple linear portions extending linearly and connected to each other through the bent portion. The gain region is disposed on each of the multiple linear portions.