The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Mar. 30, 2021
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Longjie Zhao, Shanghai, CN;
Abstract
A method for manufacturing a trench gate device includes: forming a trench in a substrate with a super junction structure; forming a gate dielectric layer in the trench; forming a polysilicon gate by filling a portion of the trench with polysilicon; forming an intermediate dielectric layer in the trench; forming an auxiliary polysilicon layer by filling a gap in the trench with polysilicon; forming a source region of the trench gate device in the substrate; depositing an interlayer dielectric layer, and forming contacts in the interlayer dielectric layer, wherein the polysilicon gate, the auxiliary polysilicon layer, and the source region are led out from the contacts; and connecting the led-out auxiliary polysilicon layer to the led-out source region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile