The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Jun. 24, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 27/11524 (2017.01); H01L 21/28 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 29/42328 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 29/40114 (2019.08);
Abstract
A method for fabricating a semiconductor device is provided. The method includes depositing a first dielectric layer over a substrate; depositing a sacrificial layer over the first dielectric layer; depositing a second dielectric layer over the sacrificial layer; depositing an erase gate electrode layer over the second dielectric layer; etching a memory hole in the erase gate electrode layer, the sacrificial layer, and the first and second dielectric layers; and forming a semiconductor layer in the memory hole.