The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Jan. 28, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor device includes forming a gate structure over an active region of a substrate, the gate structure comprising a first section and a second section. The first section and the second section dividing the active region into a first source/drain region between the first section and the second section, and a pair of second source/drain regions arranged on opposite sides of the gate structure. The method further includes forming a conductive field plate over the substrate, the field plate extending between the first section and the second section and overlapping an edge of the active region. The method further includes implanting a first well in the substrate, wherein the first well overlaps the edge of the active region. The method further includes forming an isolation structure in the substrate, wherein the conductive field plate extends over the isolation structure.