The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Jul. 28, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Aaron Michael Lowe, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 27/11502 (2017.01); H01L 27/108 (2006.01); G11C 11/22 (2006.01); G11C 5/06 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/40111 (2019.08); G11C 5/06 (2013.01); G11C 11/221 (2013.01); G11C 11/2257 (2013.01); H01L 27/0688 (2013.01); H01L 27/10805 (2013.01); H01L 27/11502 (2013.01); H01L 29/7827 (2013.01);
Abstract

Some embodiments include an integrated transistor having an active region comprising semiconductor material. The active region includes a first source/drain region, a second source/drain region and a channel region between the first and second source/drain regions. A conductive gating structure is operatively proximate the channel region and comprises molybdenum. The integrated transistor may be incorporated into integrated memory, such as, for example, DRAM, FeFET memory, etc. Some embodiments include methods of forming integrated assemblies and devices, such as, for example, integrated transistors, integrated memory, etc.


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