The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Dec. 08, 2020
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventor:
Dong Seup Lee, McKinney, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 29/0688 (2013.01); H01L 29/518 (2013.01);
Abstract
A semiconductor structure includes a first transistor including a gate structure, a drain, and a source. The gate structure of the first transistor includes a nitride-based semiconductor layer. The semiconductor structure further includes a second transistor including a gate structure, a drain, and a source. The gate structure of the second transistor also includes a nitride-based semiconductor layer. The nitride-based semiconductor layer of the first transistor's gate structure is continuous with the nitride-based semiconductor layer of the second transistor's gate structure.