The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Jul. 01, 2021
United Microelectronics Corp., Hsinchu, TW;
Shu-Ji Chen, Singapore, SG;
Jing Feng, Singapore, SG;
Xiao-Hong Jiang, Singapore, SG;
Ching-Hwa Tey, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A method for fabricating a MOMCAP includes steps as follows: An Nth metal layer is formed on a substrate according to an Nth expected capacitance value of the Nth metal layer. An Nth capacitance error value between an Nth actual capacitance value of the Nth metal layer and the Nth expected capacitance value is calculated. An N+1th expected capacitance value of an N+1th metal layer is adjusted to form an N+1th actual capacitance value according to the Nth capacitance error value, and the N+1th metal layer with an N+1th actual capacitance value is formed on the Nth metal layer according to the adjusted N+1th expected capacitance value, to make the sum of the Nth actual capacitance value and the N+1th actual capacitance value equal to the sum of the Nth expected capacitance value and the N+1th expected capacitance value. N is an integer greater than 1.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile