The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Jun. 11, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Wei-Lun Min, Hsinchu, TW;
Chang-Miao Liu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823468 (2013.01); H01L 21/7682 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01);
Abstract
A dummy gate is formed over a substrate. A sacrificial layer is formed over the dummy gate. An interlayer dielectric (ILD) is formed over the dummy gate and over the sacrificial layer. The dummy gate is replaced with a metal-containing gate. The sacrificial layer is removed. A removal of the sacrificial layer leaves air gaps around the metal-containing gate. The air gaps are then sealed.