The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Jul. 16, 2020
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Nuo Wei Luo, Singapore, SG;
Huabiao Wu, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/68 (2006.01); H01L 21/027 (2006.01); G03F 7/20 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 21/682 (2013.01); G03F 7/70633 (2013.01); H01L 21/027 (2013.01); H01L 23/544 (2013.01);
Abstract
Provided is a method of manufacturing a semiconductor device, including providing a substrate including a first region and a second region; forming an alignment mark in the substrate in the second region; forming a material layer on a first surface of the substrate in the first region and the second region; introducing heteroatoms into the substrate in the second region from a second surface of the substrate; and reacting the heteroatoms with the substrate to form a dielectric layer overlapping the alignment mark in the substrate in the second region.